The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jul. 11, 2023
Applicants:

Denso Corporation, Kariya-city, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventors:

Hiroaki Fujibayashi, Nisshin, JP;

Hirotaka Mori, Nisshin, JP;

Takayuki Satomura, Nisshin, JP;

Shigeyuki Takagi, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/76 (2026.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
H10P 72/7624 (2026.01); C23C 16/4412 (2013.01); C23C 16/45557 (2013.01); C23C 16/4584 (2013.01); C23C 16/4586 (2013.01);
Abstract

A semiconductor wafer manufacturing apparatus includes a reaction chamber, a reactant gas supply pipe and a reactant gas discharge pipe communicated with the reaction chamber, a rotating device having a cylindrical member, a lid member disposed on one end portion of the cylindrical member, a heating device disposed in a hollow chamber that is a space surrounded by the cylindrical member and the lid member, an inert gas supply pipe and an inert gas discharge pipe communicated with the hollow chamber, and a controller. The controller is configured to adjust an amount of an inert gas discharged from the inert has discharge pipe such that a pressure in the hollow chamber is higher than a pressure in the reaction chamber and equal to or lower than a pressure of a minimum closing portion of the lid member.


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