The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 06, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Han Wang, Sunnyvale, CA (US);

Gene H. Lee, San Jose, CA (US);

Yu Yang, Sunnyvale, CA (US);

Jing Zhang, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H10D 1/68 (2025.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 50/73 (2026.01); H10D 1/68 (2025.01); H10P 50/285 (2026.01);
Abstract

Methods of forming electronic devices and film stacks comprising depositing a ruthenium carbide hard mask on a capacitor mold formed on a substrate. A hard mask oxide and patterned photoresist are formed, and the pattern of the patterned photoresist are transferred into the ruthenium carbide hard mask. Film stacks comprising the ruthenium carbide hard mask on the capacitor mold are also described.


Find Patent Forward Citations

Wang, Han. (2026). Ruthenium carbide for dram capacitor mold patterning (U.S. Patent No. 12635435). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635435

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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