The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 02, 2022
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Miyako Matsui, Tokyo, JP;
Kenichi Kuwahara, Tokyo, JP;
Assignee:
Hitachi High-Tech Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H10P 74/20 (2026.01);
U.S. Cl.
CPC ...
H10P 50/242 (2026.01); H10P 74/203 (2026.01);
Abstract
A plasma processing method of forming a protective film for suppressing etching only a desired material in a pattern to etch a pattern is provided. A plasma processing method for plasma etching a film to be etched formed on a sample includes a cleaning step of cleaning a surface of the sample, a protective film forming step of selectively forming a protective film on a desired material in a pattern formed on the film to be etched, an oxidation step of oxidizing the protective film after the protective film forming step, and an etching step of plasma-etching the film to be etched.