The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 09, 2022
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventor:
Petar Atanackovic, Henley Beach South, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/822 (2025.01); H01L 21/20 (2006.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/818 (2025.01); H10H 20/851 (2025.01);
U.S. Cl.
CPC ...
H10H 20/822 (2025.01); H01L 21/2011 (2013.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/818 (2025.01); H10H 20/8513 (2025.01); H10H 20/811 (2025.01);
Abstract
An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. At least one of the epitaxial semiconductor layers can include single crystal ABO, where: 0<x<1.0; A is Al and/or Ga; and B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.