The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Oct. 28, 2022
Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou, CN;
Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou, CN;
Abstract
A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first current spreading layer, a InGaAs layer, a first cladding layer, an active layer and a second cladding layer disposed sequentially in such order from the first surface to the second surface, wherein, in the InGaAs layer, 0<x1≤0.08. In another aspect of the disclosure, the first current spreading layer is made of gallium arsenide, and has a thickness ranging from 2 μm to 10 μm and a doping concentration ranging from 1E17/cmto 4E18/cm. In yet another aspect of the disclosure, a layered stack is disposed between the first current spreading layer and the first cladding layer, and includes an InGaAs layer and an AlGaAsPlayer, in which 0.02<x≤0.20, 0≤y≤0.25, and 0.7<z≤0.95.