The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
May. 25, 2022
Applicant:
Toppan Inc., Tokyo, JP;
Inventors:
Assignee:
TOPPAN Inc., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/024 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01);
Abstract
A method of manufacturing a filter for a solid-state imaging element, including forming a color filter on a semiconductor substrate, forming an etching stopper layer on the semiconductor substrate and the color filter, forming an infrared cut precursor layer on the etching stopper layer, forming a resist pattern that covers a portion on the color filter in the infrared cut precursor layer, and forming an infrared cut filter by dry etching the infrared cut precursor layer using the resist pattern. The dry etching of the infrared cut precursor layer is conducted at an etching rate different from an etching rate of the etching stopper layer.