The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jan. 06, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tzu-Ging Lin, Kaohsiung City, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a plurality of semiconductor structures over a semiconductor substrate, forming a dummy gate stack on top surfaces and sidewalls of the plurality of semiconductor structures, forming gate spacers on sidewalls of the dummy gate stack, and etching a first portion of the dummy gate stack to form a through-gate trench in the dummy gate stack. The dummy gate stack includes a second portion and a third portion on opposing sides of the first portion. Through the through-gate trench, the plurality of semiconductor structures are etched to form a trench group underlying and connected to the through-gate trench. The trench group includes two outmost trenches, and at least one inner trench between the two outmost trenches. The two outmost trenches are deeper than the at least one inner trench.