The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Feb. 16, 2023
Xi'an Jiaotong University, Xi'an, CN;
Weihua Liu, Xi'an, CN;
Menghua Wang, Xi'an, CN;
Li Geng, Xi'an, CN;
Mingchao Yang, Xi'an, CN;
Yue Hao, Xi'an, CN;
Songquan Yang, Xi'an, CN;
XI'AN JIAOTONG UNIVERSITY, Xi'an, CN;
Abstract
Disclosed are a low-temperature processing method for improving a 4H—SiC/SiOinterface based on a supercritical oxynitride, and use thereof. The method includes: performing standard cleaning on a silicon carbide sample to be processed; performing dry-oxygen oxidation on the cleaned silicon carbide sample to grow an oxide layer; placing the silicon carbide sample having the oxide layer on a support in a steady-state supercritical chamber; controlling a pressure and injecting nitrogen-oxygen gas into the supercritical device; increasing a temperature in the supercritical device from 23° C. to 500° C.; maintaining the above supercritical state until the processing ends; reducing a temperature of a reactor to room temperature after reaction ends, reducing the pressure to an atmospheric pressure, and taking out the reactor. The present disclosure allows for effective and quick decrease in the 4H—SiC/SiOinterface state density, and also a significant decrease in the processing temperature.