The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Aug. 03, 2022
Lawrence Livermore National Security, Llc, Livermore, CA (US);
Vincenzo Lordi, Livermore, CA (US);
Noah Patrick Allen, Oakland, CA (US);
Qinghui Shao, Fremont, CA (US);
Clint Duncan Frye, Livermore, CA (US);
Kyoung Eun Kweon, Pleasanton, CA (US);
Lars F. Voss, Livermore, CA (US);
Joel Basile Varley, Livermore, CA (US);
Lawrence Livermore National Security, LLC, Livermore, CA (US);
Abstract
An apparatus, in accordance with one embodiment, includes a superjunction device having a voltage sustaining layer formed of a semiconductor material and a dopant in the voltage sustaining layer. The dopant is for distributing an electric field within the voltage sustaining layer. The dopant is more concentrated along a sidewall of the voltage sustaining layer than toward a center of the voltage sustaining layer, the sidewall extending at least a portion of the distance between a top surface and a bottom surface of a voltage sustaining layer. Methods of electric field-enhanced dopant diffusion to form a superjunction device are also presented.