The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Feb. 09, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventor:

Kai-Kuen Chang, Hsinchu City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/65 (2025.01);
U.S. Cl.
CPC ...
H10D 30/655 (2025.01); H10D 30/0281 (2025.01); H10D 62/116 (2025.01);
Abstract

A semiconductor device and a method of fabricating the same includes a substrate, two first field regions, a gate structure, a first isolation structure, and a plurality of second field regions. The two first field regions are disposed in the substrate, and the gate structure is disposed on the substrate, between the two first field regions. The first isolation structure is disposed in one of the two first field regions, under one side of the gate structure. The second field regions are disposed in the substrate, wherein the second field regions are separately and sequentially arranged to surround an outer periphery of the one of the two first field regions.


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