The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 02, 2023
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Tsing Hua University, Hsinchu, TW;

Inventors:

Ya-Chin King, Hsinchu, TW;

Chrong Jung Lin, Hsinchu, TW;

Burn Jeng Lin, Hsinchu, TW;

Yao-Hung Huang, Hsinchu, TW;

Wei Chang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/68 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/84 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6891 (2025.01); H10D 62/84 (2025.01); H10D 64/017 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01);
Abstract

A semiconductor device includes a sensing element including a sensing electrode and a filter covering the sensing electrode. The filter includes a first work function layer and a second work function layer. The first work function layer is over the sensing electrode. The second work function layer is over the first work function layer. A work function value of the second work function layer is greater than a work function value of the first work function layer, and an atomic percentage of metal in the second work function layer is greater than an atomic percentage of metal in the first work function layer.


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