The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Aug. 16, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02);
Abstract
Embodiments include a method of forming a cross-point memory device, the method and device forming a multi-layered selector material. A first level of the multi-layered selector structure may include a subset of the elements of a second level of the multi-tiered selector structure. A gradient concentration of the switching elements may be found in the selector structure, first level including a substantially steady concentration of elements and the second level including a gradient of concentration for the elements in common as well as the elements unique to the first level.