The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 11, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jeonggyu Song, Suwon-si, KR;
Eunae Cho, Suwon-si, KR;
Narae Han, Suwon-si, KR;
Beomseok Kim, Suwon-si, KR;
Cheheung Kim, Suwon-si, KR;
Jooho Lee, Suwon-si, KR;
Wonsik Choi, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/66 (2025.01); H01G 4/10 (2006.01); H10B 12/00 (2023.01); H10D 1/68 (2025.01); H10D 64/68 (2025.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); H10B 12/31 (2023.02); H10D 1/66 (2025.01); H10D 1/692 (2025.01); H10D 1/694 (2025.01); H10D 64/681 (2025.01); H10D 64/691 (2025.01); H01G 4/008 (2013.01); H01G 4/1209 (2013.01); H01G 4/1236 (2013.01);
Abstract
A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode; a second electrode disposed apart from the first electrode; a dielectric film between the first electrode and the second electrode; and a leakage current reducing layer provided on the dielectric film between the first electrode and the second electrode and including MAlO.