Wordline group dependent corrective program verify operation in a memory device

Abstract

A memory device includes a memory array including a set of target memory cells connected to a target wordline; and a first wordline and a second wordline, each adjacent to the target wordline; and control logic, operatively coupled with the memory array, to perform operations including causing a program operation to be initiated to program the set of target memory cells of the target wordline to a target programming level; determining, for each memory cell connected to each wordline of the memory array, a respective value of a metric that reflects a size of a memory cell; identifying a plurality of wordline groups in the memory array, wherein for each wordline group, each memory cell connected to each wordlines of a wordline group has the respective value falling in a respective threshold range; determining a first offset value corresponding to a first wordline group of the plurality of wordline groups, the first wordline group including the target wordline; identifying, based on programming level information of the first wordline, a program verify voltage offset associated with the target wordline; and causing, during a program verify time period of the program operation, a program verify voltage to be applied to the target wordline to verify programming of the set of target memory cells, wherein the program verify voltage is adjusted by the program verify voltage offset and the first offset value.