The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Dec. 28, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Abhijeet Paul, San Diego, CA (US);

Mishel Matloubian, San Diego, CA (US);

Ravi Pramod Kumar Vedula, San Diego, CA (US);

Periannan Chidambaram, San Diego, CA (US);

Hyunchul Jung, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/42 (2006.01); G01J 1/44 (2006.01); G01J 3/28 (2006.01);
U.S. Cl.
CPC ...
G01J 1/4204 (2013.01); G01J 1/44 (2013.01); G01J 3/28 (2013.01); G01J 2001/446 (2013.01);
Abstract

Methods and apparatus for ambient light sensor with spectral resolution are disclosed. In an aspect, an ambient light sensor comprises a photodiode having a light-facing surface comprising a first n-doped layer, a first p-doped layer disposed below and in contact with the first n-doped layer, a second n-doped layer disposed below and in contact with the first p-doped layer, and a second p-doped layer disposed below and in contact with the second n-doped layer. A junction between the first n-doped layer and the first p-doped layer forms a first vertical diode; a junction between first p-doped layer and the second n-doped layer forms a second vertical diode; and a junction between the second n-doped layer and the second p-doped layer forms a third vertical diode and a first lateral diode. Each of the diodes is most sensitive to a different range of light wavelengths than the other diodes.


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