The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

May. 04, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Manasa Medikonda, Albany, NY (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/057 (2026.01); H10W 20/064 (2026.01); H10W 20/082 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor structure that includes a metal level, a via located directly on top of a first portion of the metal level, wherein the via is tapered such that a smaller critical dimension is located at a top portion of the via and a larger critical dimension is located at a bottom portion of the via, and the bottom portion of the via is located adjacent the metal level, a dielectric cap located on top of a second portion of the metal level on which the via is not located directly thereon, and a next metal level that is located directly on the top portion of the via.


Find Patent Forward Citations

Quick Actions:

Medikonda, Manasa. (2026). Semiconductor structure with top via having extended bottom contact (U.S. Patent No. 12628636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628636

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