The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 02, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Errol Antonio C. Sanchez, Tracy, CA (US);

Shu-Kwan Lau, Sunnyvale, CA (US);

Zuoming Zhu, Sunnyvale, CA (US);

Saurabh Chopra, Santa Clara, CA (US);

Abhishek Dube, Fremont, CA (US);

Chandra Mohapatra, San Jose, CA (US);

Alexandros Anastasopoulos, San Francisco, CA (US);

Martin Jeffrey Salinas, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/00 (2026.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C30B 25/14 (2006.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 72/30 (2026.01); H10P 72/76 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0402 (2026.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/45502 (2013.01); C30B 25/14 (2013.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 72/0431 (2026.01); H10P 72/0432 (2026.01); H10P 72/33 (2026.01); H10P 72/7604 (2026.01);
Abstract

The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.


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