The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Apr. 10, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Sangheon Yong, Yongin-si, KR;
Hongsuk Kim, Yongin-si, KR;
Juhyuk Park, Hwaseong-si, KR;
Kihun Kim, Yongin-si, KR;
Sungha Choi, Suwon-si, KR;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10P 14/60 (2026.01); H10P 14/694 (2026.01); H10W 74/01 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6532 (2026.01); H10P 14/6336 (2026.01); H10P 14/6687 (2026.01); H10P 14/69433 (2026.01); H10W 74/01 (2026.01);
Abstract
A substrate processing method comprising a gap-fill process is disclosed. The method includes providing a substrate in which a gap is formed in a surface thereof to a reaction space, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the reaction space, forming a silicon nitride film having flowability on the substrate to fill at least a portion of the gap of the substrate while maintaining the reaction space in a plasma state, and densifying the silicon nitride film.