The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
May. 03, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jiech-Fun Lu, Madou Township, TW;
Chun-Tsung Kuo, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector within a substrate. The substrate is etched to define a plurality of first protrusions over the photodetector. A first dielectric layer is deposited on the substrate. A second dielectric layer is deposited on the first dielectric layer. An etching process is performed on the first and second dielectric layers such that the first dielectric layer comprises a plurality of second protrusions different from the plurality of first protrusions. The first dielectric layer is etched more quickly than the second dielectric layer during the etching process.