The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Mar. 16, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Hung-Chou Lin, Douliu City, TW;
Yi-Cheng Chiu, New Taipei City, TW;
Chen-Chien Chang, Zhubei City, TW;
Kang-Tai Peng, Zhubei City, TW;
Tian Sheng Lin, Taoyuan County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a first doped well doped with a first impurity having a first conductivity type, a second doped well adjacent the first doped well and doped with a second impurity having a second conductivity type opposite the first conductivity type, a third doped well adjacent the second doped well and doped with a third impurity having the first conductivity type, a fourth doped region in the third doped well and doped with a fourth impurity having the second conductivity type, and a deep doped well doped with a fifth impurity having the first conductivity type under a first portion of the second doped well, under the third doped well, and under the fourth doped region.