The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Apr. 19, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Yu Yen, Hsinchu, TW;

Keng-Chu Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes a substrate, a plurality of active structures, a trench, a lower epitaxy, an upper epitaxy and a bottom barrier portion. The active structures are formed on the substrate and arranged in a first direction. The trench passes through adjacent two of the active structures in a second direction and has a bottom recess. The lower epitaxy is formed on a lower portion of the trench. The upper epitaxy is formed on an upper portion of the trench and separated from the lower epitaxy. The bottom barrier portion is formed on the bottom recess and separates the substrate and the lower epitaxy.


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