The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Jul. 24, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Nao Suganuma, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Seiji Noguchi, Matsumoto, JP;
Ryutaro Hamasaki, Matsumoto, JP;
Takuya Yamada, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including a transistor portion, in which the transistor portion has a drift region of a first conductivity type provided in a semiconductor substrate, a base region of a second conductivity type provided above the drift region, an accumulation region of the first conductivity type provided above the drift region, a plurality of trench portions provided to extend from a front surface of the semiconductor substrate to the drift region, and a trench bottom portion of the second conductivity type provided in bottom portions of the plurality of trench portions, and the accumulation region has a doping concentration with a half width of 0.3 μm or more.