The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Oct. 24, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H10D 1/00 (2025.01); H10D 1/66 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 1/665 (2025.01); H10D 1/047 (2025.01); H10D 62/102 (2025.01);
Abstract
Proposed are a deep trench capacitor and a method of manufacturing the same that compensate for a thin thickness in bottom corner areas of an oxide film (e.g., SiO) grown by thermal oxidation in a deep trench to prevent a deterioration in breakdown voltage characteristics due to electric field concentration in the corner areas of the oxide film, or that relatively flatten widthwise inner sidewalls of the deep trench to improve the breakdown voltage characteristics and gap-fill characteristics of a device.
Han, Chang. (2026). Deep trench capacitor and method of manufacturing same (U.S. Patent No. 12628359). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628359
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile