Methods used in forming a memory array comprising strings of memory cells including selective depositing of silicon

Abstract

A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. A vertical stack comprising alternating first tiers and second tiers is formed above the conductor tier. Channel-material strings extend through the alternating tiers. Conducting material is formed in a lower of the first tiers that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. The forming of the conducting material comprises forming conductive material in the lower first tier against the channel material of the individual channel-material strings. The conductive material comprises an upper portion and a lower portion having a void-space vertically there-between. The void-space comprises an exposed silicon-containing surface. Silicon is selectively deposited into the void-space onto and from the exposed silicon-containing surface. Other embodiments, including structure independent of method, are disclosed.