The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Nov. 28, 2022
Applicant:

Leap Semiconductor Corp., Taoyuan City, TW;

Inventors:

Wei-Fan Chen, Taichung City, TW;

Kuo-Chi Tsai, Taoyuan City, TW;

Assignee:

LEAP Semiconductor Corp., Taoyuan City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/14 (2006.01); G01K 7/01 (2006.01); H02H 3/08 (2006.01); H02H 5/04 (2006.01); H03K 17/0812 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H03K 17/08122 (2013.01); G01K 7/01 (2013.01); H02H 3/085 (2013.01); H02H 5/042 (2013.01); H03K 2017/0806 (2013.01);
Abstract

An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end to generate a monitoring voltage. The operation circuit compares the monitoring voltage with a plurality of reference voltages to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results to generate detection temperature information. The first resistor is a poly-silicon resistor and the second resistor is a silicon carbon (SiC) diffusion resistor.


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