The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Aug. 06, 2024
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Yu-Hsuan Cheng, Hsinchu County, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 5/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01); G11C 16/30 (2006.01); H03K 3/356 (2006.01); H03K 19/00 (2006.01); H03K 19/0185 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 5/147 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); H03K 3/356113 (2013.01); H03K 19/0013 (2013.01); H03K 19/018521 (2013.01); G05F 3/262 (2013.01);
Abstract

A control gate voltage generating circuit for a non-volatile memory is provided. After the non-volatile memory leaves the factory, the control gate voltage is appropriately adjusted by the control gate voltage generating circuit according to the characteristics changes of the memory cells. When the read action is performed, the control gate voltage generating circuit provides the adjusted control gate voltage to the control gate line of the array structure. The magnitude of the reference current can be maintained in the range between the read current in the erase state and the read current in the program state. Consequently, the storage state of the selected memory cell can be accurately determined, and the life time of the non-volatile memory will be extended.


Find Patent Forward Citations

Cheng, Yu-Hsuan. (2026). Control gate voltage generating circuit for non-volatile memory (U.S. Patent No. 12626770). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12626770

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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