The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Aug. 09, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sean S. Eilert, Penryn, CA (US);
Aliasger T. Zaidy, Seattle, WA (US);
Glen E. Hush, Boise, ID (US);
Kunal R. Parekh, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4093 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 13/28 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01); G16B 30/00 (2019.01); G16B 50/10 (2019.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G06F 3/0656 (2013.01); G06F 13/1673 (2013.01); G06F 13/28 (2013.01); G11C 7/08 (2013.01); G11C 7/1039 (2013.01); G11C 11/4087 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01); G16B 30/00 (2019.02); G16B 50/10 (2019.02); H01L 21/78 (2013.01); H01L 22/12 (2013.01); H01L 24/08 (2013.01); H01L 24/48 (2013.01); H01L 24/80 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); G06F 2213/28 (2013.01); H01L 24/16 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/1601 (2013.01); H01L 2224/16221 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48221 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/1436 (2013.01);
Abstract
A wafer-on-wafer formed memory and logic device can enable high bandwidth transmission of data directly between a memory die and a logic die. The memory die can be formed as one of many memory dies on a first semiconductor wafer. The logic die can be formed as one of many logic dies on a second semiconductor wafer. The first and second wafers can be bonded via a wafer-on-wafer bonding process. The memory and logic device can be singulated from the bonded first and second wafers.