The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jan. 25, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhuangzhuang Wu, Wuhan, CN;

Ruxin Wei, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/22 (2006.01); H02M 1/14 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
G11C 5/145 (2013.01); G11C 7/222 (2013.01); H02M 1/14 (2013.01); H02M 3/07 (2013.01);
Abstract

Examples of the present disclosure provide a memory, a storage system, and an operation method of a memory. The memory includes: a plurality of memory planes and a peripheral circuit coupled to the memory planes. The peripheral circuit includes: a plurality of charge pumps, a charge pump having a clock signal end, an input end, and an output end, wherein the output end of each of the charge pumps is coupled to one of the plurality of memory planes; the charge pump is configured to boost an input voltage of the input end according to a clock signal received by the clock signal end and then output the same to the output end; wherein clock signals received by clock signal ends of the plurality of charge pumps are different.


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