The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jul. 07, 2023
Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Ken Harada, Tokyo, JP;

Tatsunobu Suzuki, Tokyo, JP;

Mari Abe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01);
Abstract

An etching composition that includes a quaternary ammonium salt having 8 or more carbon atoms and selectively dissolves silicon over silicon germanium, and may further include a chelating agent, an etching method comprising etching a structure that contains silicon and silicon germanium by using the etching composition, a method for manufacturing a semiconductor device, and a method for manufacturing a gate-all-around-type transistor using the etching composition.


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