The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Mar. 21, 2022
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Yihao Chen, Shanghai, CN;

Tim Huang, Shanghai, CN;

Zengyu Zhou, Shanghai, CN;

Rui Yuan, Shanghai, CN;

Fen Yu, Shanghai, CN;

Hope Chiu, Shanghai, CN;

Assignee:

SANDISK TECHNOLOGIES, INC., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 23/49838 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/73204 (2013.01);
Abstract

A semiconductor device package includes a semiconductor die including bond pads and an underfill inlet side, a substrate including a first metal layer and lower metal layers underneath the first metal layer, a plurality of metal contacts and trace segment lines disposed in the first metal layer, and a plurality of solder bump rows. Each of the solder bump rows is oriented substantially parallel to the inlet side of the semiconductor die and electrically connects bond pads of the semiconductor die with corresponding metal contacts in the first metal layer of the substrate. Each of the trace segment lines is oriented substantially parallel to the inlet side of the semiconductor die, is electrically coupled to a respective solder bump row of the plurality of solder bump rows, and includes trace segments disposed in the first metal layer and trace segments disposed in one or more of the lower metal layers.


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