Method for fabricating semiconductor structure, and semiconductor structure

Abstract

Embodiments are a method for fabricating a semiconductor structure. The method includes: providing a substrate; etching the substrate to form bit line grooves extending along a first direction; sequentially forming a first isolation layer, a bit line metal line layer, a bit line conductive connection layer and a first insulating layer to obtain a bit line structure; etching to form a substrate of the bit line structure, and to obtain a plurality of active area structures arranged at intervals and a first groove, the bit line structure intersecting with the active area structures; filling the first groove with a second isolation layer to obtain a first structure; etching the first structure to form word line grooves extending along a direction perpendicular to the first direction; and sequentially forming a third isolation layer, a word line conductive connection layer and a second insulating layer in the word line groove.