The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jan. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Lien Huang, Hsinchu, TW;

Wei Hsiang Chan, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/76807 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

Provided are conductive structures located within dielectric material, and methods for fabricating such structures and devices. An exemplary method includes providing a substrate having a conductive feature in a first dielectric layer; depositing a second dielectric layer over the conductive feature and the first dielectric layer; etching the second dielectric layer to form a cavity through the second dielectric layer, wherein the cavity has a bottom with a convex profile; depositing a barrier layer along the bottom of the cavity; and depositing a conductive material in the cavity to form a structure electrically connected to the conductive feature.


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