The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

May. 23, 2023
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventors:

Steve Nagel, Chandler, AZ (US);

Bomy Chen, Newark, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H10P 90/00 (2026.01); H10W 10/10 (2026.01);
U.S. Cl.
CPC ...
H10P 90/1914 (2026.01); H10D 86/201 (2025.01); H10W 10/181 (2026.01);
Abstract

Methods for preparing a donor silicon wafer by applying a SiGe layer on a silicon substrate wafer, depositing a silicon layer on the SiGe layer, etching the silicon layer to form an opening in the silicon layer, wet etching the SiGe layer through the opening in the silicon layer to partially remove SiGe material from the SiGe layer and preserve the silicon layer, depositing a buried oxide layer on the silicon layer, etching the buried oxide layer to form a body bias area, and depositing silicon in the body bias area; bonding a recipient handle wafer to the etched buried oxide layer of the donor silicon wafer to define a BOX; and wet etching the SiGe layer to release the donor silicon wafer from the recipient handle wafer.


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