The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Apr. 17, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventor:
Hui-Lin Wang, Taipei City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract
A method for fabricating a semiconductor device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer on the MTJ, forming a first inter-metal dielectric (IMD) layer on the first cap layer, forming a second cap layer on the first cap layer and the first IMD layer, forming a second IMD layer on the first cap layer, the first IMD layer, and the second cap layer, and then planarizing the first cap layer, the first IMD layer, the second cap layer, and the second IMD layer.