The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Nov. 11, 2021
International Business Machines Corporation, Armonk, NY (US);
Chanro Park, Clifton Park, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Andrew Gaul, Halfmoon, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a first gate upon a semiconductor substrate and a second gate upon the semiconductor substrate in line with the first gate. A gate cut dielectric is between the first gate and the second gate. A first gate cap is upon a top surface of the first gate and a second gate cap is upon a top surface of the second gate. A gate cut multilayer structure is between the first gate cap and the second gate cap. The gate cut multilayer structure includes a dielectric between a first substantially vertical spacer and a second substantially vertical spacer. A first sidewall of the multilayer structure is coplanar with an end of the first gate and a second opposing sidewall of the multilayer structure is coplanar with an end of the second gate.