The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Oct. 23, 2023
University of Electronic Science and Technology of China, Chengdu, CN;
Ming Qiao, Chengdu, CN;
Yue Gao, Chengdu, CN;
Jiawei Wang, Chengdu, CN;
Dingxiang MA, Chengdu, CN;
Bo Zhang, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, CN;
Abstract
A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a second doping type second body area, a dielectric layer, a control gate, a body electrode, second doping type polysilicon and first doping type polysilicon. The control gate is led out and connected to different potentials; when the device is in an off state, the control gate is connected to a low potential to assist the drift area in depletion; and when the device is in an on state, the control gate is connected to a high potential, and more carriers are induced on a silicon surface below the control gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile