The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Mar. 21, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Moonyoung Jeong, Suwon-si, KR;

Kiseok Lee, Suwon-si, KR;

Sangho Lee, Suwon-si, KR;

Hyungjun Noh, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/36 (2023.02); H01L 23/5283 (2013.01); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor device includes a substrate, a first gate structure and a second gate structure on the substrate, a single back gate structure between the first gate structure and the second gate structure, a first structure including a first vertical channel region extending in a vertical direction, at least a portion of the first vertical channel region between the first gate structure and the single back gate structure, and a second structure including a second vertical channel region extending in the vertical direction. The second structure is spaced apart from the first structure, and at least a portion of the second vertical channel region is between the second gate structure and the single back gate structure.


Find Patent Forward Citations

Loading…