The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Nov. 22, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Zhongyuan Lu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 13/00 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 13/0035 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/34 (2013.01); G11C 16/349 (2013.01); G11C 16/3495 (2013.01); G11C 29/50004 (2013.01); G11C 29/50016 (2013.01);
Abstract

A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including identifying an erased block of the memory array, causing a set of cells addressable by a target wordline of the erased block to be set to a target threshold voltage, determining an amount of threshold voltage shift with respect to the target threshold voltage after a delay, determining whether the amount of threshold voltage shift satisfies a threshold condition defined by a target data retention metric, and in response to determining that the amount of threshold voltage shift is sufficient, releasing the erased block for programming.


Find Patent Forward Citations

Loading…