The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jul. 21, 2023
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Yuya Takahashi, Matsumoto, JP;

Shunsuke Tanaka, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 18/54 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
C23C 18/54 (2013.01); H01L 21/288 (2013.01);
Abstract

Provided is a manufacturing method of a semiconductor device, comprising: performing a zincate treatment on a first metal layer provided above a semiconductor substrate with a zincate solution; forming a nickel-plated layer above the first metal layer; and forming a gold-plated layer above the nickel-plated layer, wherein in the performing the zincate treatment, a flow rate of the zincate solution supplied to a bath for performing the zincate treatment is 16 L/min or more and 20 L/min or less.


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Takahashi, Yuya. (2026). Semiconductor device manufacturing method (U.S. Patent No. 12618158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12618158

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