The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 12, 2024
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Beronika Levtchin, Chaska, MN (US);
Kate Abel, Austin, TX (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01);
Abstract
The present disclosure provides a new wet atomic layer etch (ALE) process for etching silicon dioxide (SiO) materials. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching a SiOlayer in a cyclic wet ALE process. The new etch chemistries disclosed herein use an anhydrous basic surface modification solution to create self-limiting reactions on exposed surfaces of the SiOlayer and form a silicate passivation layer, which is insoluble in the surface modification solution, but readily soluble in a dissolution solution.