The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Aug. 09, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chien-Ying Wu, Hsinchu City, TW;
Li-Hsin Chu, New Taipei City, TW;
Chung-Chuan Tseng, Hsinchu City, TW;
Chia-Wei Liu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80377 (2025.01); H10F 39/014 (2025.01); H10F 39/021 (2025.01); H10F 39/184 (2025.01); H10F 39/193 (2025.01); H10F 39/803 (2025.01);
Abstract
A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.