The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Feb. 16, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shu-Uei Jang, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for fabricating semiconductor devices includes forming a first semiconductor channel structure and a second semiconductor channel structure over a substrate; forming a metal gate structure, wherein the metal gate structure includes a first portion and a second portion straddling the first semiconductor channel structure and the second semiconductor channel structure, respectively; replacing a third portion of the metal gate structure between the first portion and the second portion with a first dielectric material to form a gate isolation structure, wherein a width of the gate isolation structure along the second direction decreases with an increasing depth of the gate isolation structure toward the substrate; and replacing a portion of the gate isolation structure, the second portion of the metal gate structure, and the second semiconductor channel structure with a second dielectric material to form an edge isolation structure.