The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jan. 30, 2023
Applicant:
Changxin Memory Technologies, Inc., Hefei City, CN;
Inventor:
Xiang Liu, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/663 (2025.01); H10D 30/0291 (2025.01); H10D 62/292 (2025.01); H10D 64/252 (2025.01); H10D 64/518 (2025.01);
Abstract
A method for forming a semiconductor structure includes the following operations. A substrate is formed. The substrate includes a body part and a protrusion part located on a surface of the body part. A gate electrode located on the body part and distributed around sidewalls of the protrusion part is formed. A first doped region and a second doped region located in the body part and distributed at two opposite sides of the gate electrode are formed.
Liu, Xiang. (2026). Semiconductor structure with increased channel length and method for forming the same (U.S. Patent No. 12615799). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12615799
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile