The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Dec. 14, 2022
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Huan Wang, Hangzhou, CN;
Silergy Semiconductor Technology (Hangzhou) LTD., Hangzhou, CN;
Abstract
A semiconductor device can include: a semiconductor doped region; a patterned interlayer dielectric layer located on the semiconductor doped region; an electrode structure connected to the semiconductor doped region through opening holes of the interlayer dielectric layer; a patterned metal silicide layer located on the semiconductor doped region; where the electrode structure comprises a first conductive pillar and a second conductive pillar, the first conductive pillar is connected to the metal silicide layer, and the second conductive pillar is connected to an upper surface of the semiconductor doped region; and where the first conductive pillar and the second conductive pillar are not in contact with a heavily doped region in the semiconductor doped region, and the doping concentration of the semiconductor doped region is not greater than 10cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile