The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 27, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Ming Lung, Hsinchu, TW;
Chung-Ting Ko, Kaohsiung, TW;
Ting-Hsiang Chang, New Taipei, TW;
Sung-En Lin, Hsinchu County, TW;
Chi On Chui, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a fin structure, a metal gate stack, a barrier structure and an epitaxial source/drain region. The fin structure is over a substrate. The metal gate stack is across the fin structure. The barrier structure is on opposite sides of the metal gate stack. The barrier structure comprises one or more passivation layers and one or more barrier layers, and the one or more passivation layers have a material different from a material of the one or more barrier layers. The epitaxial source/drain region is over the barrier structure.