The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Mar. 01, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yusuke Nakajima, Yokohama, JP;

Akira Takashima, Tokyo, JP;

Tsunehiro Ino, Fujisawa, JP;

Atsushi Murakoshi, Yokohama, JP;

Masaki Noguchi, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02);
Abstract

According to one embodiment, a semiconductor device includes a stacked body of alternating conductor layers and insulator layers stacked in a first direction and a columnar body extending through the stacked body in the first direction. The columnar body includes a first insulating layer extending in the first direction and comprising aluminum and oxygen, a semiconductor layer between the first insulating layer and the conductor layers of the stacked body, a charge storage film between the semiconductor layer and the conductor layers, and a second insulating layer between the semiconductor layer and the first insulating layer and comprising silicon and oxygen. An interface between the semiconductor layer and the second insulating layer contains nitrogen to eliminate defects which may reduce channel mobility or the like.


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