Method of manufacturing semiconductor structure and semiconductor structure

Abstract

The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method includes: providing an initial structure, where the initial structure includes a substrate and initial word line structures, and each of the initial word line structures includes an initial conductive structure; forming isolation trenches, where a remaining part of the substrate is isolated by the isolation trenches to form a plurality of active area structures independent of each other, the active area structures cover first parts of the initial word line structures, and the isolation trenches expose second parts of the initial word line structures; and removing part of the second part of the initial word line structure.