Method for fabricating semiconductor structure and semiconductor structure

Abstract

Embodiments provide a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate; forming, on a surface of the substrate, stacked structures arranged at intervals in a first direction and a first isolation layer located between adjacent stacked structures, the stacked structure including a first interlayer dielectric layer, an initial active layer, and a second interlayer dielectric layer; etching a portion of the initial active layer to form a first trench; forming a metal conductive layer in the first trench, the metal conductive layer being in contact connection with the remained initial active layer; and etching a portion of the metal conductive layer to form lower electrode structures arranged in an array in the first direction and a second direction, where the first direction is perpendicular to the surface of the substrate, and the second direction is parallel to the surface of the substrate.