The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Sep. 07, 2023
Applicant:

Synopsys, Inc., Sunnyvale, CA (US);

Inventor:

Rouwaida Kanj, Cedar Park, TX (US);

Assignee:

Synopsys, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/24 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/24 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01); G11C 7/22 (2013.01);
Abstract

An example is a method. A first logical value is written to a latch node of a latch circuit of a half static random access memory (SRAM) cell. A second logical value is read from the latch node. The latch circuit is non-inverter-based. The latch circuit includes a p-type transistor and an n-type transistor. A drain node of the p-type transistor is electrically connected to a gate node of the n-type transistor, and a drain node of the n-type transistor is electrically connected to a gate node of the p-type transistor. According to some examples, the half SRAM cell may be implemented as a storage node, for a physical unclonable function (PUF), and/or for data padding.


Find Patent Forward Citations

Kanj, Rouwaida. (2026). Half static random access memory (sram) cell (U.S. Patent No. 12614575). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12614575

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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