Methods for optical proximity correction and methods of manufacturing semiconductor devices having the same

Abstract

Methods for optical proximity correction (OPC), which may include inputting curved layout data corresponding to a target layer to be formed; performing manhattanization based on the curved layout data and acquiring manhattanized data; performing fragmentation on the manhattanized data and decomposing the manhattanized data into a plurality of data components; generating an OPC model based on the plurality of data components and performing a simulation on the OPC model to extract a contour of the OPC model; calculating an overlap score between the contour of the OPC model and a layer that is adjacent to the target layer and reflecting the calculated overlap score in the OPC model; and acquiring design data for forming the target layer based on the simulation result. Therefore, it is possible to obtain design data having positioning optimized according to positioning a target layer in consideration of an adjacent layer by the method for optical proximity correction according to some example embodiments of the present disclosure.